TP2640N3-G P002

MOSFET P-CH Enhancmnt Mode MOSFET

Availability: 710 in stock

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R 54.02

R 45.06

R 40.85

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MOSFETs 400V 15Ohm
Lead Time: 28 Days

Products specifications

Vds - Drain-Source Breakdown Voltage	400 V
Vgs - Gate-Source Voltage	20 V
Pd - Power Dissipation	1 W
Technology	Si
Packaging	Cut Tape, Reel
Id - Continuous Drain Current	180 mA
Number of Channels	1 Channel
Transistor Polarity	P-Channel
Mounting Style	Through Hole
Rds On - Drain-Source Resistance	15 Ohms
Channel Mode	Enhancement
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Configuration	Single

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Products specifications

Vds - Drain-Source Breakdown Voltage	400 V
Vgs - Gate-Source Voltage	20 V
Pd - Power Dissipation	1 W
Technology	Si
Packaging	Cut Tape, Reel
Id - Continuous Drain Current	180 mA
Number of Channels	1 Channel
Transistor Polarity	P-Channel
Mounting Style	Through Hole
Rds On - Drain-Source Resistance	15 Ohms
Channel Mode	Enhancement
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Configuration	Single