MOSFET P-CH Enhancmnt Mode MOSFET
Products specifications
Minimum Operating Temperature | - 55 C |
Technology | Si |
Vds - Drain-Source Breakdown Voltage | 350 V |
Mounting Style | Through Hole |
Rds On - Drain-Source Resistance | 30 Ohms |
Packaging | Cut Tape, Reel |
Id - Continuous Drain Current | 86 mA |
Vgs - Gate-Source Voltage | 20 V |
Maximum Operating Temperature | + 150 C |
Transistor Polarity | P-Channel |
Channel Mode | Enhancement |
Pd - Power Dissipation | 740 mW |
Configuration | Single |
Number of Channels | 1 Channel |