TP2535N3-G P002

MOSFET P-CH Enhancmnt Mode MOSFET

Availability: 1301 in stock

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R 34.78

R 31.62

R 29.25

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MOSFETs 350V 25Ohm
Lead Time: 0 Days

Products specifications

Id - Continuous Drain Current	86 mA
Number of Channels	1 Channel
Mounting Style	Through Hole
Pd - Power Dissipation	740 mW
Channel Mode	Enhancement
Technology	Si
Transistor Polarity	P-Channel
Configuration	Single
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Vgs - Gate-Source Voltage	20 V
Vds - Drain-Source Breakdown Voltage	350 V
Rds On - Drain-Source Resistance	30 Ohms
Packaging	Cut Tape, Reel

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Products specifications

Id - Continuous Drain Current	86 mA
Number of Channels	1 Channel
Mounting Style	Through Hole
Pd - Power Dissipation	740 mW
Channel Mode	Enhancement
Technology	Si
Transistor Polarity	P-Channel
Configuration	Single
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Vgs - Gate-Source Voltage	20 V
Vds - Drain-Source Breakdown Voltage	350 V
Rds On - Drain-Source Resistance	30 Ohms
Packaging	Cut Tape, Reel