TP2535N3-G

MOSFET 350V 25Ohm

Availability: 1301 in stock

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R 34.78

R 31.62

R 29.25

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MOSFETs 350V 25Ohm
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Products specifications

Configuration	Single
Technology	Si
Id - Continuous Drain Current	86 mA
Vds - Drain-Source Breakdown Voltage	350 V
Number of Channels	1 Channel
Mounting Style	Through Hole
Minimum Operating Temperature	- 55 C
Transistor Polarity	P-Channel
Maximum Operating Temperature	+ 150 C
Channel Mode	Enhancement
Packaging	Bulk
Vgs - Gate-Source Voltage	20 V
Rds On - Drain-Source Resistance	25 Ohms
Pd - Power Dissipation	740 mW

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Products specifications

Configuration	Single
Technology	Si
Id - Continuous Drain Current	86 mA
Vds - Drain-Source Breakdown Voltage	350 V
Number of Channels	1 Channel
Mounting Style	Through Hole
Minimum Operating Temperature	- 55 C
Transistor Polarity	P-Channel
Maximum Operating Temperature	+ 150 C
Channel Mode	Enhancement
Packaging	Bulk
Vgs - Gate-Source Voltage	20 V
Rds On - Drain-Source Resistance	25 Ohms
Pd - Power Dissipation	740 mW