Number of Channels | 1 Channel |
Packaging | Bulk |
Technology | Si |
Pd - Power Dissipation | 740 mW |
Transistor Polarity | P-Channel |
Vgs - Gate-Source Voltage | 4.5 V |
Minimum Operating Temperature | - 55 C |
Mounting Style | Through Hole |
Vgs th - Gate-Source Threshold Voltage | 1 V |
Channel Mode | Enhancement |
Rds On - Drain-Source Resistance | 10 Ohms |
Id - Continuous Drain Current | 175 mA |
Configuration | Single |
Maximum Operating Temperature | + 150 C |
Vds - Drain-Source Breakdown Voltage | 40 V |