MOSFET P-CH Enhancmnt Mode MOSFET
Products specifications
Technology | Si |
Channel Mode | Enhancement |
Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 40 V |
Pd - Power Dissipation | 1 W |
Id - Continuous Drain Current | 430 mA |
Transistor Polarity | P-Channel |
Vgs - Gate-Source Voltage | 20 V |
Maximum Operating Temperature | + 150 C |
Rds On - Drain-Source Resistance | 3.5 Ohms |
Packaging | Cut Tape, Reel |
Mounting Style | Through Hole |
Configuration | Single |
Minimum Operating Temperature | - 55 C |