Vgs - Gate-Source Voltage | 10 V |
Vds - Drain-Source Breakdown Voltage | 40 V |
Vgs th - Gate-Source Threshold Voltage | 1 V |
Rds On - Drain-Source Resistance | 2 Ohms |
Pd - Power Dissipation | 0.74 W |
Technology | Si |
Configuration | Single |
Number of Channels | 1 Channel |
Channel Mode | Enhancement |
Mounting Style | Through Hole |
Packaging | Bulk |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Id - Continuous Drain Current | 430 mA |
Transistor Polarity | P-Channel |