MOSFET N-CH Enhancmnt Mode MOSFET
Products specifications
Technology | Si |
Vds - Drain-Source Breakdown Voltage | 250 V |
Mounting Style | Through Hole |
Packaging | Cut Tape, Reel |
Rds On - Drain-Source Resistance | 8 Ohms |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Channel Mode | Enhancement |
Id - Continuous Drain Current | 215 mA |
Configuration | Single |