MOSFET N-CH Enhancmnt Mode MOSFET
Products specifications
Vgs - Gate-Source Voltage | 20 V |
Pd - Power Dissipation | 740 mW |
Packaging | Cut Tape, Reel |
Id - Continuous Drain Current | 220 mA |
Vds - Drain-Source Breakdown Voltage | 400 V |
Configuration | Single |
Maximum Operating Temperature | + 150 C |
Mounting Style | Through Hole |
Minimum Operating Temperature | - 55 C |
Rds On - Drain-Source Resistance | 5 Ohms |
Technology | Si |
Channel Mode | Enhancement |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |