Configuration | Single |
Channel Mode | Enhancement |
Minimum Operating Temperature | - 55 C |
Packaging | Bulk |
Technology | Si |
Maximum Operating Temperature | + 150 C |
Vgs - Gate-Source Voltage | 10 V |
Vds - Drain-Source Breakdown Voltage | 60 V |
Number of Channels | 1 Channel |
Pd - Power Dissipation | 740 mW |
Id - Continuous Drain Current | 300 mA |
Transistor Polarity | N-Channel |
Rds On - Drain-Source Resistance | 2.5 Ohms |
Mounting Style | Through Hole |
Vgs th - Gate-Source Threshold Voltage | 600 mV |