MOSFET N-CH Enhancmnt Mode MOSFET
Products specifications
Vds - Drain-Source Breakdown Voltage | 200 V |
Id - Continuous Drain Current | 250 mA |
Channel Mode | Enhancement |
Mounting Style | Through Hole |
Configuration | Single |
Rds On - Drain-Source Resistance | 8 Ohms |
Packaging | Cut Tape, Reel |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Technology | Si |