MOSFET N-CH Enhancmnt Mode MOSFET
Products specifications
Mounting Style | Through Hole |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 200 V |
Pd - Power Dissipation | 1 W |
Rds On - Drain-Source Resistance | 8 Ohms |
Vgs - Gate-Source Voltage | 20 V |
Technology | Si |
Configuration | Single |
Channel Mode | Enhancement |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Packaging | Cut Tape, Reel |
Id - Continuous Drain Current | 250 mA |