Number of Channels | 1 Channel |
Vgs th - Gate-Source Threshold Voltage | 600 mV |
Packaging | Bulk |
Pd - Power Dissipation | 1 W |
Rds On - Drain-Source Resistance | 6 Ohms |
Minimum Operating Temperature | - 55 C |
Vgs - Gate-Source Voltage | 10 V |
Vds - Drain-Source Breakdown Voltage | 200 V |
Channel Mode | Enhancement |
Configuration | Single |
Technology | Si |
Maximum Operating Temperature | + 150 C |
Id - Continuous Drain Current | 500 mA |
Mounting Style | Through Hole |
Transistor Polarity | N-Channel |