MOSFET N-CH Enhancmnt Mode MOSFET
Products specifications
Technology | Si |
Packaging | Ammo Pack |
Mounting Style | Through Hole |
Rds On - Drain-Source Resistance | 1.6 Ohms |
Channel Mode | Enhancement |
Transistor Polarity | N-Channel |
Minimum Operating Temperature | - 55 C |
Vds - Drain-Source Breakdown Voltage | 40 V |
Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 740 mW |
Vgs - Gate-Source Voltage | 20 V |
Configuration | Single |
Id - Continuous Drain Current | 700 mA |
Number of Channels | 1 Channel |