Channel Mode | Enhancement |
Mounting Style | Through Hole |
Packaging | Bulk |
Vds - Drain-Source Breakdown Voltage | 40 V |
Vgs th - Gate-Source Threshold Voltage | 600 mV |
Vgs - Gate-Source Voltage | 10 V |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Configuration | Single |
Id - Continuous Drain Current | 700 mA |
Pd - Power Dissipation | 740 mW |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Technology | Si |
Rds On - Drain-Source Resistance | 750 mOhms |