MOSFET N-Channel DMOS FET Low Threshold 2.0V
Products specifications
Configuration | Single |
Pd - Power Dissipation | 1 W |
Technology | Si |
Packaging | Cut Tape, Reel |
Minimum Operating Temperature | - 55 C |
Channel Mode | Enhancement |
Transistor Polarity | N-Channel |
Id - Continuous Drain Current | 350 mA |
Vgs - Gate-Source Voltage | 2 V |
Maximum Operating Temperature | + 150 C |
Vds - Drain-Source Breakdown Voltage | 60 V |
Rds On - Drain-Source Resistance | 4.5 Ohms |
Number of Channels | 1 Channel |
Mounting Style | Through Hole |