Vds - Drain-Source Breakdown Voltage | 60 V |
Channel Mode | Enhancement |
Vgs th - Gate-Source Threshold Voltage | 600 mV |
Vgs - Gate-Source Voltage | 10 V |
Transistor Polarity | N-Channel |
Configuration | Single |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Packaging | Bulk |
Number of Channels | 1 Channel |
Id - Continuous Drain Current | 350 mA |
Pd - Power Dissipation | 1 W |
Technology | Si |
Mounting Style | Through Hole |
Rds On - Drain-Source Resistance | 3 Ohms |