MOSFETs 90V 4Ohm
Lead Time: 42 Days
Products specifications
Pd - Power Dissipation | 6.25 W |
Packaging | Bulk |
Vds - Drain-Source Breakdown Voltage | 10 V |
Vgs th - Gate-Source Threshold Voltage | 800 mV |
Mounting Style | Through Hole |
Technology | Si |
Number of Channels | 1 Channel |
Rds On - Drain-Source Resistance | 4 Ohms |
Id - Continuous Drain Current | 350 mA |
Transistor Polarity | N-Channel |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Vgs - Gate-Source Voltage | 10 V |
Channel Mode | Enhancement |
Configuration | Single |