MOSFETs 60V 3Ohm
Lead Time: 42 Days
Products specifications
Vgs - Gate-Source Voltage | 10 V |
Pd - Power Dissipation | 6.25 W |
Configuration | Single |
Vds - Drain-Source Breakdown Voltage | 60 V |
Vgs th - Gate-Source Threshold Voltage | 800 mV |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Rds On - Drain-Source Resistance | 3 Ohms |
Channel Mode | Enhancement |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Id - Continuous Drain Current | 410 mA |
Packaging | Bulk |
Mounting Style | Through Hole |
Technology | Si |