TISP5115H3BJR-S

R 1.19

Thyristor Surge Protection Devices - TSPD Forward Conducting Unidirectional

SKU: TISP5115H3BJR-S

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Thyristor Surge Protection Devices - TSPD Forward Conducting Unidirectional

Products specifications

Breakover Voltage VBO	- 115 V
Off-State Leakage Current @ VDRM IDRM	- 5 uA
Maximum Operating Temperature	+ 85 C
Minimum Operating Temperature	- 40 C
Non Repetitive On-State Current	55 A, 60 A
Off-State Capacitance CO	56 pF to 214 pF
On-State Voltage	- 3 V
Packaging	Cut Tape, MouseReel, Reel
Rated Repetitive Off-State Voltage VDRM	- 90 V
Holding Current Ih Max	600 mA
Breakover Current IBO Max	600 mA

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Products specifications

Breakover Voltage VBO	- 115 V
Off-State Leakage Current @ VDRM IDRM	- 5 uA
Maximum Operating Temperature	+ 85 C
Minimum Operating Temperature	- 40 C
Non Repetitive On-State Current	55 A, 60 A
Off-State Capacitance CO	56 pF to 214 pF
On-State Voltage	- 3 V
Packaging	Cut Tape, MouseReel, Reel
Rated Repetitive Off-State Voltage VDRM	- 90 V
Holding Current Ih Max	600 mA
Breakover Current IBO Max	600 mA