Phototransistors IR Phototransistor
Products specifications
Collector-Emitter Breakdown Voltage | 30 V |
Minimum Operating Temperature | - 25 C |
Product | Phototransistors |
Mounting Style | Through Hole |
Peak Wavelength | 940 nm |
Maximum On-State Collector Current | 3.41 mA |
Pd - Power Dissipation | 75 mW |
Fall Time | 15 us |
Maximum Operating Temperature | + 85 C |
Dark Current | 100 nA |
Collector- Emitter Voltage VCEO Max | 30 V |
Collector-Emitter Saturation Voltage | 0.4 V |
Rise Time | 15 us |