Phototransistors IR Phototransistor
Products specifications
Rise Time | 15 us |
Pd - Power Dissipation | 75 mW |
Collector-Emitter Breakdown Voltage | 30 V |
Minimum Operating Temperature | - 25 C |
Collector-Emitter Saturation Voltage | 0.4 V |
Product | Phototransistors |
Fall Time | 15 us |
Collector- Emitter Voltage VCEO Max | 30 V |
Maximum On-State Collector Current | 20 mA |
Maximum Operating Temperature | + 85 C |
Dark Current | 100 nA |
Mounting Style | Through Hole |