MOSFETs Low Side IntelliFET
Lead Time: 56 Days
Products specifications
Configuration | Dual |
Channel Mode | Enhancement |
Rds On - Drain-Source Resistance | 150 mOhms |
Pd - Power Dissipation | 1.67 W |
Transistor Polarity | N-Channel |
Minimum Operating Temperature | - 40 C |
Number of Channels | 2 Channel |
Maximum Operating Temperature | + 125 C |
Vds - Drain-Source Breakdown Voltage | 60 V |
Qg - Gate Charge | - |
Packaging | Cut Tape, MouseReel, Reel |
Vgs - Gate-Source Voltage | 5 V |
Technology | Si |
Id - Continuous Drain Current | 1.8 A |
Vgs th - Gate-Source Threshold Voltage | 700 mV |