MOSFETs 60V P-Ch Enh FET 20Vgs 2W 125mOhm
Lead Time: 56 Days
Products specifications
Minimum Operating Temperature | - 55 C |
Pd - Power Dissipation | 16 W |
Technology | Si |
Qualification | AEC-Q101 |
Rds On - Drain-Source Resistance | 125 mOhms |
Maximum Operating Temperature | + 150 C |
Vds - Drain-Source Breakdown Voltage | 60 V |
Packaging | Cut Tape, MouseReel, Reel |
Configuration | Single |
Channel Mode | Enhancement |
Transistor Polarity | P-Channel |
Vgs - Gate-Source Voltage | 10 V |
Id - Continuous Drain Current | 3.5 A |
Qg - Gate Charge | 17.7 nC |
Number of Channels | 1 Channel |
Vgs th - Gate-Source Threshold Voltage | 1 V |