MOSFET 60V P-Ch Enh Mode 1.1W 3A 637pF 17.7nC
Lead Time: 56 Days
Products specifications
Qg - Gate Charge | 17.7 nC |
Packaging | Cut Tape, MouseReel, Reel |
Configuration | Single |
Rds On - Drain-Source Resistance | 120 mOhms |
Vds - Drain-Source Breakdown Voltage | 60 V |
Transistor Polarity | P-Channel |
Technology | Si |
Channel Mode | Enhancement |
Vgs - Gate-Source Voltage | 10 V |
Maximum Operating Temperature | + 150 C |
Vgs th - Gate-Source Threshold Voltage | 1 V |
Number of Channels | 1 Channel |
Minimum Operating Temperature | - 55 C |
Qualification | AEC-Q101 |
Id - Continuous Drain Current | 3 A |
Pd - Power Dissipation | 1.92 W |