MOSFET Dual P-Ch 60V Enh 2.15W -1Vgs 1021pF
Products specifications
Technology | Si |
Packaging | Cut Tape, MouseReel, Reel |
Pd - Power Dissipation | 2.15 W |
Id - Continuous Drain Current | 3.9 A |
Qualification | AEC-Q101 |
Configuration | Dual |
Channel Mode | Enhancement |
Qg - Gate Charge | 24.2 nC |
Vgs - Gate-Source Voltage | 20 V |
Vds - Drain-Source Breakdown Voltage | 60 V |
Rds On - Drain-Source Resistance | 125 mOhms |
Maximum Operating Temperature | + 150 C |
Vgs th - Gate-Source Threshold Voltage | 1 V |
Minimum Operating Temperature | - 55 C |
Transistor Polarity | P-Channel |
Number of Channels | 2 Channel |