MOSFET 60V P-Ch Enh Fet 20Vgs 625pD 219pF
Lead Time: 56 Days
Products specifications
Id - Continuous Drain Current | 1.1 A |
Configuration | Single |
Maximum Operating Temperature | + 150 C |
Channel Mode | Enhancement |
Qg - Gate Charge | 2.9 nC |
Transistor Polarity | P-Channel |
Vgs th - Gate-Source Threshold Voltage | 1 V |
Technology | Si |
Rds On - Drain-Source Resistance | 400 mOhms |
Vgs - Gate-Source Voltage | 10 V |
Vds - Drain-Source Breakdown Voltage | 60 V |
Number of Channels | 1 Channel |
Minimum Operating Temperature | - 55 C |
Qualification | AEC-Q101 |
Packaging | Cut Tape, MouseReel, Reel |
Pd - Power Dissipation | 806 mW |