MOSFETs 100V P-Ch Enh FET 20Vgs -0.5A ID 625mW
Lead Time: 56 Days
Products specifications
Channel Mode | Enhancement |
Qg - Gate Charge | 3.5 nC |
Rds On - Drain-Source Resistance | 1 Ohms |
Qualification | AEC-Q101 |
Transistor Polarity | P-Channel |
Vds - Drain-Source Breakdown Voltage | 100 V |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Technology | Si |
Configuration | Single |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Pd - Power Dissipation | 806 mW |
Id - Continuous Drain Current | 700 mA |
Vgs - Gate-Source Voltage | 10 V |
Number of Channels | 1 Channel |
Packaging | Cut Tape, MouseReel, Reel |