MOSFETs MOSFETBVDSS: 41V-60V
Products specifications
Configuration | Single |
Vgs - Gate-Source Voltage | 20 V |
Qualification | AEC-Q101 |
Number of Channels | 1 Channel |
Vgs th - Gate-Source Threshold Voltage | 1 V |
Rds On - Drain-Source Resistance | 40 mOhms |
Packaging | Reel |
Id - Continuous Drain Current | 11.8 A |
Technology | Si |
Qg - Gate Charge | 29 nC |
Maximum Operating Temperature | + 150 C |
Transistor Polarity | N-Channel |
Channel Mode | Enhancement |
Vds - Drain-Source Breakdown Voltage | 60 V |
Pd - Power Dissipation | 10.1 W |
Minimum Operating Temperature | - 55 C |