MOSFETs MOSFET BVDSS 41V 60V
Products specifications
Vgs - Gate-Source Voltage | 20 V |
Qualification | AEC-Q101 |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Vds - Drain-Source Breakdown Voltage | 60 V |
Vgs th - Gate-Source Threshold Voltage | 1 V |
Number of Channels | 1 Channel |
Packaging | Reel |
Pd - Power Dissipation | 3.9 W |
Transistor Polarity | N-Channel |
Id - Continuous Drain Current | 5.3 A |
Qg - Gate Charge | 5.8 nC |
Rds On - Drain-Source Resistance | 80 mOhms |
Technology | Si |
Configuration | Single |
Channel Mode | Enhancement |