ZXMN6A08E6QTA

MOSFETs 60V N-Ch Enh FET 20Vgs 80mOhm
Lead Time: 56 Days

SKU: ZXMN6A08E6QTA

Availability: 3171 in stock

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MOSFETs 60V N-Ch Enh FET 20Vgs 80mOhm
Lead Time: 56 Days

Products specifications

Configuration	Single
Vds - Drain-Source Breakdown Voltage	60 V
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Qg - Gate Charge	5.8 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Rds On - Drain-Source Resistance	150 mOhms
Packaging	Cut Tape, MouseReel, Reel
Vgs - Gate-Source Voltage	20 V
Id - Continuous Drain Current	2.5 A
Channel Mode	Enhancement
Pd - Power Dissipation	8.8 W
Vgs th - Gate-Source Threshold Voltage	1 V
Technology	Si
Qualification	AEC-Q101

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Products specifications

Configuration	Single
Vds - Drain-Source Breakdown Voltage	60 V
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Qg - Gate Charge	5.8 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Rds On - Drain-Source Resistance	150 mOhms
Packaging	Cut Tape, MouseReel, Reel
Vgs - Gate-Source Voltage	20 V
Id - Continuous Drain Current	2.5 A
Channel Mode	Enhancement
Pd - Power Dissipation	8.8 W
Vgs th - Gate-Source Threshold Voltage	1 V
Technology	Si
Qualification	AEC-Q101