ZXMC10A816N8TC

MOSFETs 100V COMPLEMENTARY DUAL ENHANCEMNT MODE
Lead Time: 56 Days

SKU: ZXMC10A816N8TC

Availability: 10619 in stock

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MOSFETs 100V COMPLEMENTARY DUAL ENHANCEMNT MODE
Lead Time: 56 Days

Products specifications

Technology	Si
Vds - Drain-Source Breakdown Voltage	100 V
Transistor Polarity	N-Channel, P-Channel
Channel Mode	Enhancement
Id - Continuous Drain Current	2.1 A, 2.2 A
Rds On - Drain-Source Resistance	230 mOhms, 235 mOhms
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	1.8 W
Vgs - Gate-Source Voltage	10 V
Minimum Operating Temperature	- 55 C
Number of Channels	2 Channel
Qg - Gate Charge	9.2 nC, 16.5 nC
Vgs th - Gate-Source Threshold Voltage	1.7 V, 2 V
Packaging	Cut Tape, MouseReel, Reel
Configuration	Dual

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Products specifications

Technology	Si
Vds - Drain-Source Breakdown Voltage	100 V
Transistor Polarity	N-Channel, P-Channel
Channel Mode	Enhancement
Id - Continuous Drain Current	2.1 A, 2.2 A
Rds On - Drain-Source Resistance	230 mOhms, 235 mOhms
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	1.8 W
Vgs - Gate-Source Voltage	10 V
Minimum Operating Temperature	- 55 C
Number of Channels	2 Channel
Qg - Gate Charge	9.2 nC, 16.5 nC
Vgs th - Gate-Source Threshold Voltage	1.7 V, 2 V
Packaging	Cut Tape, MouseReel, Reel
Configuration	Dual