DMN10H099SK3-13

MOSFETs 100V N-Ch Enh FET 20Vgs 1172pF 25.2nC
Lead Time: 56 Days

SKU: DMN10H099SK3-13

Availability: 2461 in stock

Qty:

PRICE BREAKS - The more you buy, the more you save

Quantity

1+

10+

100+

500+

1000+

2500+

Price

R 16.61

R 14.65

R 9.99

R 8.32

R 7.08

R 5.92

Free shipping

MOSFETs 100V N-Ch Enh FET 20Vgs 1172pF 25.2nC
Lead Time: 56 Days

Products specifications

Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Qg - Gate Charge	25.2 nC
Technology	Si
Configuration	Single
Channel Mode	Enhancement
Packaging	Cut Tape, MouseReel, Reel
Vds - Drain-Source Breakdown Voltage	100 V
Vgs th - Gate-Source Threshold Voltage	2 V
Vgs - Gate-Source Voltage	20 V
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Pd - Power Dissipation	34 W
Rds On - Drain-Source Resistance	69 mOhms
Id - Continuous Drain Current	17 A

Your name *

Your email *

Enquiry *

Products specifications

Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Qg - Gate Charge	25.2 nC
Technology	Si
Configuration	Single
Channel Mode	Enhancement
Packaging	Cut Tape, MouseReel, Reel
Vds - Drain-Source Breakdown Voltage	100 V
Vgs th - Gate-Source Threshold Voltage	2 V
Vgs - Gate-Source Voltage	20 V
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Pd - Power Dissipation	34 W
Rds On - Drain-Source Resistance	69 mOhms
Id - Continuous Drain Current	17 A