MOSFETs N-Channel
Lead Time: 56 Days
Products specifications
Pd - Power Dissipation | 540 mW |
Technology | Si |
Vgs th - Gate-Source Threshold Voltage | 1 V |
Vds - Drain-Source Breakdown Voltage | 60 V |
Rds On - Drain-Source Resistance | 2 Ohms |
Maximum Operating Temperature | + 150 C |
Vgs - Gate-Source Voltage | 10 V |
Channel Mode | Enhancement |
Id - Continuous Drain Current | 380 mA |
Qg - Gate Charge | 0.3 nC |
Packaging | Cut Tape, MouseReel, Reel |
Minimum Operating Temperature | - 55 C |
Configuration | Single |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |