MOSFETs 60V N-Ch Enh FET 7.5Ohm 5Vgs 210mA
Lead Time: 56 Days
Products specifications
Qg - Gate Charge | 352 pC |
Packaging | Cut Tape, MouseReel, Reel |
Channel Mode | Enhancement |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Technology | Si |
Configuration | Single |
Pd - Power Dissipation | 510 mW |
Id - Continuous Drain Current | 210 mA |
Minimum Operating Temperature | - 55 C |
Vgs - Gate-Source Voltage | 5 V |
Maximum Operating Temperature | + 150 C |
Rds On - Drain-Source Resistance | 7.5 Ohms |
Vds - Drain-Source Breakdown Voltage | 60 V |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |