MOSFETs N-CHANNEL ENHANCEMENT MODE
Lead Time: 56 Days
Products specifications
Packaging | Cut Tape, MouseReel, Reel |
Rds On - Drain-Source Resistance | 6 Ohms |
Vgs - Gate-Source Voltage | 5 V |
Pd - Power Dissipation | 540 mW |
Configuration | Single |
Technology | Si |
Channel Mode | Enhancement |
Vds - Drain-Source Breakdown Voltage | 60 V |
Vgs th - Gate-Source Threshold Voltage | 1.2 V |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Id - Continuous Drain Current | 220 mA |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |