MOSFETs 60V 200mW
Lead Time: 56 Days
Products specifications
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Rds On - Drain-Source Resistance | 5 Ohms |
Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 540 mW |
Configuration | Single |
Technology | Si |
Id - Continuous Drain Current | 210 mA |
Vds - Drain-Source Breakdown Voltage | 60 V |
Minimum Operating Temperature | - 55 C |
Channel Mode | Enhancement |
Packaging | Cut Tape, MouseReel, Reel |
Vgs - Gate-Source Voltage | 10 V |
Vgs th - Gate-Source Threshold Voltage | 1 V |
Qg - Gate Charge | 223 pC |