2DD1766R-13

Bipolar Transistors - BJT 1000W 32Vceo

SKU: 2DD1766R-13

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R 10.72

R 9.10

R 6.33

R 5.82

R 4.79

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R 3.58

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Bipolar Transistors - BJT 1000W 32Vceo

Products specifications

Collector-Emitter Saturation Voltage	800 mV
Maximum DC Collector Current	2.5 A
Collector- Emitter Voltage VCEO Max	32 V
Transistor Polarity	NPN
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Configuration	Single
Emitter- Base Voltage VEBO	5 V
Series	2DD17
Gain Bandwidth Product fT	220 MHz
Collector- Base Voltage VCBO	40 V

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Products specifications

Collector-Emitter Saturation Voltage	800 mV
Maximum DC Collector Current	2.5 A
Collector- Emitter Voltage VCEO Max	32 V
Transistor Polarity	NPN
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Configuration	Single
Emitter- Base Voltage VEBO	5 V
Series	2DD17
Gain Bandwidth Product fT	220 MHz
Collector- Base Voltage VCBO	40 V