2DD1766P-13

Bipolar Transistors - BJT 1000W 32Vceo

SKU: 2DD1766P-13

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R 11.34

R 9.69

R 7.24

R 5.65

R 4.39

R 3.96

R 3.74

R 3.50

R 3.39

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Bipolar Transistors - BJT 1000W 32Vceo

Products specifications

Collector- Base Voltage VCBO	40 V
Collector-Emitter Saturation Voltage	800 mV
Maximum Operating Temperature	+ 150 C
Emitter- Base Voltage VEBO	5 V
Minimum Operating Temperature	- 55 C
Maximum DC Collector Current	2 A
Series	2DD17
Gain Bandwidth Product fT	220 MHz
Configuration	Single
Collector- Emitter Voltage VCEO Max	32 V
Transistor Polarity	NPN

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Products specifications

Collector- Base Voltage VCBO	40 V
Collector-Emitter Saturation Voltage	800 mV
Maximum Operating Temperature	+ 150 C
Emitter- Base Voltage VEBO	5 V
Minimum Operating Temperature	- 55 C
Maximum DC Collector Current	2 A
Series	2DD17
Gain Bandwidth Product fT	220 MHz
Configuration	Single
Collector- Emitter Voltage VCEO Max	32 V
Transistor Polarity	NPN