2DD1664R-13

Bipolar Transistors - BJT 1000W 32Vceo
Lead Time: 56 Days

SKU: 2DD1664R-13

Availability: 1115 in stock

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R 12.06

R 8.13

R 4.28

R 3.82

R 3.07

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Bipolar Transistors - BJT 1000W 32Vceo
Lead Time: 56 Days

Products specifications

Collector-Emitter Saturation Voltage	400 mV
Emitter- Base Voltage VEBO	6 V
Collector- Base Voltage VCBO	40 V
Collector- Emitter Voltage VCEO Max	32 V
Gain Bandwidth Product fT	280 MHz
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Configuration	Single
Transistor Polarity	NPN
Series	2DD16
Maximum DC Collector Current	1 A

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Products specifications

Collector-Emitter Saturation Voltage	400 mV
Emitter- Base Voltage VEBO	6 V
Collector- Base Voltage VCBO	40 V
Collector- Emitter Voltage VCEO Max	32 V
Gain Bandwidth Product fT	280 MHz
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Configuration	Single
Transistor Polarity	NPN
Series	2DD16
Maximum DC Collector Current	1 A