JFET P-Ch 30Vgd JFET 30Vgs 50mA 225mW
Products specifications
Technology | Si |
Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 350 mW |
Rds On - Drain-Source Resistance | 125 Ohms |
Vgs - Gate-Source Breakdown Voltage | 30 V |
Transistor Polarity | P-Channel |
Packaging | Bulk |
Minimum Operating Temperature | - 65 C |
Vds - Drain-Source Breakdown Voltage | 15 V |
Configuration | Single |
Series | CMPFJ175 |