MOSFETs N-Ch 60Vds 60Vdg 40Vgs 350mW
Products specifications
Minimum Operating Temperature | - 65 C |
Configuration | Single |
Vds - Drain-Source Breakdown Voltage | 60 V |
Vgs - Gate-Source Voltage | 40 V |
Technology | Si |
Vgs th - Gate-Source Threshold Voltage | 2.1 V |
Pd - Power Dissipation | 350 mW |
Qg - Gate Charge | 592 pC |
Id - Continuous Drain Current | 115 mA |
Packaging | Reel |
Channel Mode | Enhancement |
Maximum Operating Temperature | + 150 C |
Rds On - Drain-Source Resistance | 7.5 Ohms |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |