JFETs 8V,10mA,360mW Through-Hole JFET N Channel
Lead Time: 28 Days
Products specifications
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 25 V |
Mounting Style | Through Hole |
Pd - Power Dissipation | 360 mW |
Id - Continuous Drain Current | 20 mA |
Technology | Si |
Packaging | Bulk |
Product Type | RF JFET Transistors |
Vgs - Gate-Source Breakdown Voltage | 25 V |
Transistor Type | JFET |