MOSFET Dual P-Ch Enh-Mode MOSFET
Products specifications
Number of Channels | 2 Channel |
Packaging | Tube |
Minimum Operating Temperature | - 40 C |
Transistor Polarity | P-Channel |
Vds - Drain-Source Breakdown Voltage | 15 V |
Id - Continuous Drain Current | 1.17 A |
Technology | Si |
Vgs - Gate-Source Voltage | 2 V, - 15 V |
Pd - Power Dissipation | 840 mW |
Channel Mode | Enhancement |
Maximum Operating Temperature | + 125 C |
Configuration | Dual |
Rds On - Drain-Source Resistance | 180 mOhms |