MOSFET Single P-Ch Enh-Mode MOSFET
Products specifications
Rds On - Drain-Source Resistance | 90 mOhms |
Vds - Drain-Source Breakdown Voltage | 15 V |
Packaging | Tube |
Minimum Operating Temperature | - 40 C |
Technology | Si |
Pd - Power Dissipation | 791 mW |
Maximum Operating Temperature | + 125 C |
Vgs - Gate-Source Voltage | 2 V, - 15 V |
Transistor Polarity | P-Channel |
Configuration | Single |
Channel Mode | Enhancement |
Id - Continuous Drain Current | 2.3 A |
Number of Channels | 1 Channel |