MOSFET Quad P-Channel EPAD Matched Pair
Products specifications
Rds On - Drain-Source Resistance | 1 kOhms |
Id - Continuous Drain Current | 2.07 mA |
Qg - Gate Charge | - |
Vds - Drain-Source Breakdown Voltage | 8 V |
Pd - Power Dissipation | 500 mW |
Technology | Si |
Vgs - Gate-Source Voltage | 8 V |
Transistor Polarity | P-Channel |
Vgs th - Gate-Source Threshold Voltage | 20 mV |
Number of Channels | 4 Channel |
Configuration | Quad |
Channel Mode | Enhancement |
Minimum Operating Temperature | 0 C |
Maximum Operating Temperature | + 70 C |