ALD212904SAL

MOSFET Dual N-Ch Matched Pr VGS=0.0V

SKU: ALD212904SAL

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MOSFET Dual N-Ch Matched Pr VGS=0.0V

Products specifications

Vgs th - Gate-Source Threshold Voltage	400 mV
Tradename	EPAD
Configuration	Dual
Vgs - Gate-Source Voltage	10.6 V
Vds - Drain-Source Breakdown Voltage	10 V
Transistor Polarity	N-Channel
Id - Continuous Drain Current	79 mA
Minimum Operating Temperature	0 C
Maximum Operating Temperature	+ 70 C
Packaging	Tube
Technology	Si
Channel Mode	Enhancement
Rds On - Drain-Source Resistance	14 Ohms
Number of Channels	2 Channel

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Products specifications

Vgs th - Gate-Source Threshold Voltage	400 mV
Tradename	EPAD
Configuration	Dual
Vgs - Gate-Source Voltage	10.6 V
Vds - Drain-Source Breakdown Voltage	10 V
Transistor Polarity	N-Channel
Id - Continuous Drain Current	79 mA
Minimum Operating Temperature	0 C
Maximum Operating Temperature	+ 70 C
Packaging	Tube
Technology	Si
Channel Mode	Enhancement
Rds On - Drain-Source Resistance	14 Ohms
Number of Channels	2 Channel