ALD212902SAL

MOSFET Dual N-Ch Matched Pr VGS=0.0V

SKU: ALD212902SAL

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MOSFET Dual N-Ch Matched Pr VGS=0.0V

Products specifications

Transistor Polarity	N-Channel
Configuration	Dual
Channel Mode	Enhancement
Vgs - Gate-Source Voltage	10.6 V
Rds On - Drain-Source Resistance	14 Ohms
Technology	Si
Vds - Drain-Source Breakdown Voltage	10 V
Maximum Operating Temperature	+ 70 C
Tradename	EPAD
Id - Continuous Drain Current	79 mA
Number of Channels	2 Channel
Pd - Power Dissipation	500 mW
Minimum Operating Temperature	0 C
Vgs th - Gate-Source Threshold Voltage	180 mV
Packaging	Tube

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Products specifications

Transistor Polarity	N-Channel
Configuration	Dual
Channel Mode	Enhancement
Vgs - Gate-Source Voltage	10.6 V
Rds On - Drain-Source Resistance	14 Ohms
Technology	Si
Vds - Drain-Source Breakdown Voltage	10 V
Maximum Operating Temperature	+ 70 C
Tradename	EPAD
Id - Continuous Drain Current	79 mA
Number of Channels	2 Channel
Pd - Power Dissipation	500 mW
Minimum Operating Temperature	0 C
Vgs th - Gate-Source Threshold Voltage	180 mV
Packaging	Tube