ALD212900SAL

MOSFETs Dual N-Ch EPAD FET Array VGS=0.0V

SKU: ALD212900SAL

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MOSFETs Dual N-Ch EPAD FET Array VGS=0.0V

Products specifications

Technology	Si
Transistor Polarity	N-Channel
Id - Continuous Drain Current	79 mA
Vgs - Gate-Source Voltage	10.6 V
Pd - Power Dissipation	500 mW
Configuration	Dual
Maximum Operating Temperature	+ 70 C
Minimum Operating Temperature	0 C
Channel Mode	Depletion
Number of Channels	2 Channel
Vds - Drain-Source Breakdown Voltage	10 V
Packaging	Tube
Vgs th - Gate-Source Threshold Voltage	20 mV
Rds On - Drain-Source Resistance	14 Ohms

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Products specifications

Technology	Si
Transistor Polarity	N-Channel
Id - Continuous Drain Current	79 mA
Vgs - Gate-Source Voltage	10.6 V
Pd - Power Dissipation	500 mW
Configuration	Dual
Maximum Operating Temperature	+ 70 C
Minimum Operating Temperature	0 C
Channel Mode	Depletion
Number of Channels	2 Channel
Vds - Drain-Source Breakdown Voltage	10 V
Packaging	Tube
Vgs th - Gate-Source Threshold Voltage	20 mV
Rds On - Drain-Source Resistance	14 Ohms