MOSFET Dual N-Ch EPAD FET Array VGS=0.0V
Lead Time: 62 Days
Products specifications
Vgs th - Gate-Source Threshold Voltage | 10 mV |
Channel Mode | Depletion |
Transistor Polarity | N-Channel |
Rds On - Drain-Source Resistance | 14 Ohms |
Configuration | Dual |
Id - Continuous Drain Current | 79 mA |
Minimum Operating Temperature | 0 C |
Maximum Operating Temperature | + 70 C |
Vgs - Gate-Source Voltage | 10.6 V |
Pd - Power Dissipation | 500 mW |
Number of Channels | 2 Channel |
Vds - Drain-Source Breakdown Voltage | 10 V |
Packaging | Tube |
Technology | Si |